Open AccessHigh-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
Author(s) -
Yosuke Sasama,
Katsuyoshi Komatsu,
Satoshi Moriyama,
Masataka Imura,
Tokuyuki Teraji,
Kenji Watanabe,
Takashi Taniguchi,
Takashi Uchihashi,
T. Yamaguchi
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5055812
Subject(s) - materials science , diamond , optoelectronics , monocrystalline silicon , electron mobility , dielectric , field effect transistor , wide bandgap semiconductor , transistor , semiconductor , band gap , silicon , electrical engineering , voltage , engineering , composite material
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