Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films | Zendy

Jacob H. Leach | Zendy; Kevin Udwary | Zendy; Jaime Rumsey | Zendy; Gregg Dodson | Zendy; Heather Splawn | Zendy; K. R. Evans | Zendy

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Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

Author(s) -

Jacob H. Leach,

Kevin Udwary,

Jaime Rumsey,

Gregg Dodson,

Heather Splawn,

K. R. Evans

Publication year - 2018

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5055680

Subject(s) - sapphire , epitaxy , materials science , crystallinity , substrate (aquarium) , morphology (biology) , halide , crystal growth , crystal twinning , crystal (programming language) , phase (matter) , vapor phase , thin film , crystallography , chemical vapor deposition , chemical engineering , optoelectronics , optics , nanotechnology , composite material , microstructure , layer (electronics) , inorganic chemistry , chemistry , laser , oceanography , computer science , engineering , biology , genetics , programming language , physics , organic chemistry , geology , thermodynamics

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