Open AccessStudy of porous GaN dimension for ultra-violet photodetector
Author(s) -
Uzair Ahmad Termizi,
Alhan Farhanah Abd Rahim,
Siti Zubaidah Md Saad,
M.Z. Musa,
Rosfariza Radzali,
Lyly Nyl Ismail
Publication year - 2018
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5055421
Subject(s) - materials science , optoelectronics , wide bandgap semiconductor , gallium nitride , photodetector , band gap , gallium , ultra violet , light emitting diode , voltage , nanotechnology , physics , layer (electronics) , metallurgy , quantum mechanics
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