Open AccessImpact of proton irradiation on conductivity and deep level defects in β-Ga2O3
Author(s) -
M. E. Ingebrigtsen,
Andrej Kuznetsov,
B. G. Svensson,
Giovanni Alfieri,
Andrei Mihaila,
Uwe Badstübner,
Aurélien Perron,
Lasse Vines,
Joel B. Varley
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5054826
Subject(s) - materials science , deep level transient spectroscopy , activation energy , passivation , irradiation , charge carrier , gallium , crystallographic defect , arrhenius equation , analytical chemistry (journal) , proton , fermi level , optoelectronics , silicon , crystallography , nanotechnology , chemistry , electron , metallurgy , physics , nuclear physics , layer (electronics) , chromatography , quantum mechanics
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