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Reversible metallization and carrier transport behavior of In2S3 under high pressure
Author(s) -
Yuqiang Li,
Yang Gao,
Ningru Xiao,
Pingfan Ning,
Liyuan Yu,
Jianxin Zhang,
Pingjuan Niu,
Yanzhang Ma,
Chunxiao Gao
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5054752
Subject(s) - electrical resistivity and conductivity , hall effect , materials science , indium , superconductivity , condensed matter physics , analytical chemistry (journal) , superconducting transition temperature , electron mobility , chemistry , metallurgy , optoelectronics , electrical engineering , physics , engineering , chromatography

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