z-logo
open-access-imgOpen Access
Electron tunneling properties of Al2O3 tunnel barrier made using atomic layer deposition in multilayer devices
Author(s) -
Ryan Goul,
Jamie Wilt,
Jagaran Acharya,
Bo Liu,
Dan Ewing,
Matthew Casper,
Alex Stramel,
Alan Elliot,
Judy Wu
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5052163
Subject(s) - atomic layer deposition , quantum tunnelling , materials science , surface roughness , tunnel junction , surface finish , barrier layer , deposition (geology) , optoelectronics , nanotechnology , layer (electronics) , composite material , paleontology , sediment , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom