Open AccessEpitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Author(s) -
Yuichi Oshima,
Katsuaki Kawara,
Takashi Shinohe,
Toshimi Hitora,
Makoto Kasu,
Shizυo Fujita
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5051058
Subject(s) - epitaxy , materials science , sapphire , facet (psychology) , transmission electron microscopy , halide , vapor phase , dislocation , optoelectronics , crystal (programming language) , crystallography , optics , nanotechnology , composite material , inorganic chemistry , layer (electronics) , chemistry , psychology , social psychology , laser , physics , personality , computer science , big five personality traits , programming language , thermodynamics
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