Open AccessSi and Sn doping of ε-Ga2O3 layers
Author(s) -
A. Parisini,
A. Bosio,
V. Montedoro,
Alessandra Gorreri,
Alessio Lamperti,
Matteo Bosi,
G. Garulli,
Salvatore Vantaggio,
R. Fornari
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5050982
Subject(s) - materials science , electrical resistivity and conductivity , doping , dopant , impurity , variable range hopping , chemical vapor deposition , phase (matter) , condensed matter physics , epitaxy , thermal conduction , analytical chemistry (journal) , conductivity , atmospheric temperature range , nanotechnology , optoelectronics , chemistry , composite material , layer (electronics) , thermodynamics , physics , organic chemistry , chromatography , electrical engineering , engineering
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