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Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]
Author(s) -
JrTai Chen,
Johan Bergsten,
Jun Lu,
Erik Janzén,
Mattias Thorsell,
Lars Hultman,
Niklas Rorsman,
Olof Kordina
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5050885
Subject(s) - wide bandgap semiconductor , materials science , power electronics , electronics , optoelectronics , power (physics) , condensed matter physics , nanotechnology , physics , electrical engineering , quantum mechanics , engineering

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