Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) | Zendy

Frank Wilson Amalraj | Zendy; Arun Kumar Dhasiyan | Zendy; Yi Lu | Zendy; Naohiro Shimizu | Zendy; Osamu Oda | Zendy; Kenji Ishikawa | Zendy; Hiroki Kondo | Zendy; Makoto Sekine | Zendy; Nobuyuki Ikarashi | Zendy; Masaru Hori | Zendy

Open Access

Effect of N₂/H₂ plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Author(s) -

Frank Wilson Amalraj,

Arun Kumar Dhasiyan,

Yi Lu,

Naohiro Shimizu,

Osamu Oda,

Kenji Ishikawa,

Hiroki Kondo,

Makoto Sekine,

Nobuyuki Ikarashi,

Masaru Hori

Publication year - 2018

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5050819

Subject(s) - reflection high energy electron diffraction , chemical vapor deposition , materials science , gallium nitride , substrate (aquarium) , electron diffraction , transmission electron microscopy , plasma , crystal (programming language) , metalorganic vapour phase epitaxy , epitaxy , optoelectronics , analytical chemistry (journal) , diffraction , chemistry , nanotechnology , optics , layer (electronics) , oceanography , physics , quantum mechanics , chromatography , geology , computer science , programming language

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