Open AccessAnalysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors
Author(s) -
Juhyung Kim,
Jaewon Jeong,
Sanghyun Lee,
Seokwon Jeong,
Yonghan Roh
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5050174
Subject(s) - hysteresis , vacancy defect , transistor , field effect transistor , acceptor , materials science , realization (probability) , tungsten , instability , condensed matter physics , optoelectronics , chemical physics , nanotechnology , chemistry , physics , voltage , quantum mechanics , statistics , mathematics , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom