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Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell
Author(s) -
M. Heini,
Abuduwayiti Aierken,
Z. H. Li,
Xiaofan Zhao,
Momin Sailai,
X. B. Shen,
Yan Xu,
H. T. Liu,
Y. D. Li,
Q. Guo,
Chunhong Liu
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5049367
Subject(s) - triple junction , fluence , materials science , irradiation , optoelectronics , solar cell , metalorganic vapour phase epitaxy , spectral line , radiation , electron beam processing , gallium arsenide , electron , transmission electron microscopy , optics , epitaxy , composite material , layer (electronics) , nanotechnology , physics , quantum mechanics , astronomy , nuclear physics

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