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Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots
Author(s) -
Adeline Lanterne,
Guilherme Gaspar,
Bjørn Haave,
Moez Jomâa,
Rune Søndenå,
A. Hupfer,
Yu Hu,
Marisa Di Sabatino
Publication year - 2018
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5049331
Subject(s) - silicon , materials science , thermal , fraction (chemistry) , metallurgy , chemistry , thermodynamics , physics , organic chemistry
:For the first time, the impact of the tail detachment on the quality of the last solid fraction of a Czochralski silicon ingot body is reported. Simulations of the thermal history were performed on CGSim software and showed that producing an ingot with a tail detached from the melt before the cone-end (the so called “popped-out” tail) changes the time that the last part of the ingot body remains at the 900-1200°C temperature range and could thus impact the growth of defects such as oxygen precipitates. In addition, ingots with tails completely grown were characterized and compared to ingots with popped-out tails. Lifetime measurements of the ingot last solid fraction were performed while voids and oxygen related defects were delineated with chemical etchants. These measurements were complemented with FTIR measurements performed at room and low temperature (30 K), before a two-step thermal oxidation took place. The results show no impact of the earlier detachment from the melt on the as-grown lifetime, as...

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