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Transient PhotoConductance Decay (PCD) measurements on silicon ingots and blocks with different photogeneration profiles are simulated in this work. The results show that a deeper generation profile, achieved by using longpass optical filters with longer cut off wavelengths, can improve the accuracy of the transient lifetime measurements by approximately 10% in the lifetime range above 150 μs under typical measurement conditions. This improvement is due to reduced recombination at the unpassivated surface as the carrier density profiles peak is moved deeper into the bulk. The simulation results are confirmed by comparison with experimental lifetime measurements using three different optical filters on a monocrystalline silicon block.

Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration