Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration | Zendy

Mohsen Goodarzi | Zendy; Ronald A. Sinton | Zendy; Daniel Macdonald | Zendy

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Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration

Author(s) -

Mohsen Goodarzi,

Ronald A. Sinton,

Daniel Macdonald

Publication year - 2018

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.5049247

Subject(s) - materials science , transient (computer programming) , monocrystalline silicon , optoelectronics , silicon , carrier lifetime , wavelength , photoconductivity , optical filter , optics , computer science , physics , operating system

Transient PhotoConductance Decay (PCD) measurements on silicon ingots and blocks with different photogeneration profiles are simulated in this work. The results show that a deeper generation profile, achieved by using longpass optical filters with longer cut off wavelengths, can improve the accuracy of the transient lifetime measurements by approximately 10% in the lifetime range above 150 μs under typical measurement conditions. This improvement is due to reduced recombination at the unpassivated surface as the carrier density profiles peak is moved deeper into the bulk. The simulation results are confirmed by comparison with experimental lifetime measurements using three different optical filters on a monocrystalline silicon block.

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