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The high pressure phase transformation behavior of silicon nanowires
Author(s) -
Larissa Q. Huston,
Alois Lugstein,
J. S. Williams,
J. E. Bradby
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5048033
Subject(s) - nanowire , nucleation , materials science , raman spectroscopy , diamond , phase (matter) , silicon , diffraction , vapor–liquid–solid method , decompression , nanotechnology , crystallography , analytical chemistry (journal) , composite material , optoelectronics , chemistry , thermodynamics , optics , physics , organic chemistry , chromatography
Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ∼11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ∼11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si n...

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