Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition | Zendy

Kevin Leedy | Zendy; Kelson D. Chabak | Zendy; Vladimir Vasilyev | Zendy; D. C. Look | Zendy; K. Mahalingam | Zendy; Jeff L. Brown | Zendy; Andrew J. Green | Zendy; Cynthia T. Bowers | Zendy; Antonio Crespo | Zendy; Darren B. Thomson | Zendy; Gregg H. Jessen | Zendy

Open Access

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga₂O₃ films by pulsed laser deposition

Author(s) -

Kevin Leedy,

Kelson D. Chabak,

Vladimir Vasilyev,

D. C. Look,

K. Mahalingam,

Jeff L. Brown,

Andrew J. Green,

Cynthia T. Bowers,

Antonio Crespo,

Darren B. Thomson,

Gregg H. Jessen

Publication year - 2018

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5047214

Subject(s) - materials science , pulsed laser deposition , analytical chemistry (journal) , thin film , doping , dopant , chemical vapor deposition , electron mobility , electrical resistivity and conductivity , epitaxy , deposition (geology) , impurity , conductivity , nanotechnology , optoelectronics , chemistry , engineering , chromatography , layer (electronics) , sediment , electrical engineering , biology , organic chemistry , paleontology

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