Open AccessResistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
Author(s) -
Feng Liang,
Jing Yang,
Degang Zhao,
Desheng Jiang,
Zongshun Liu,
J.J. Zhu,
Ping Chen,
Shuangtao Liu,
Yao Xing,
Lingqian Zhang,
W. J. Wang,
Mo Li,
Y. T. Zhang,
Gaoming Du
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5046875
Subject(s) - impurity , electrical resistivity and conductivity , materials science , photoluminescence , acceptor , analytical chemistry (journal) , diode , optoelectronics , carbon fibers , chemistry , condensed matter physics , electrical engineering , composite material , physics , organic chemistry , chromatography , composite number , engineering
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