Open AccessBandlike and localized states of extended defects in n-type In0.53Ga0.47As
Author(s) -
Po-Chun Hsu,
Eddy Simoen,
Clément Merckling,
Geert Eneman,
Yves Mols,
A. Alian,
R. Langer,
N. Collaert,
Marc Heyns
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5046827
Subject(s) - materials science , indium , deep level transient spectroscopy , metalorganic vapour phase epitaxy , dislocation , acceptor , vacancy defect , epitaxy , condensed matter physics , crystallography , silicon , chemistry , layer (electronics) , optoelectronics , physics , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom