Open AccessInfluence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor
Author(s) -
Wanlin Guo,
Pengfei Tan,
Xiaoping Ouyang,
Bo Li,
H. X. Guo,
Xiangli Zhong,
J. B. Wang,
F. Wang
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5046431
Subject(s) - materials science , ferroelectricity , grain boundary , condensed matter physics , field effect transistor , electric field , transistor , polarization (electrochemistry) , capacitance , voltage , optoelectronics , electrical engineering , composite material , chemistry , physics , electrode , dielectric , microstructure , quantum mechanics , engineering
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