Open AccessInsight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes
Author(s) -
Juanli Zhao,
Zhihua Xiong,
Ning Wu
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5046131
Subject(s) - light emitting diode , optoelectronics , band bending , voltage droop , materials science , diode , wide bandgap semiconductor , quantum efficiency , electron , quantum well , leakage (economics) , electric field , reverse leakage current , voltage , optics , physics , schottky diode , laser , macroeconomics , quantum mechanics , economics , voltage divider
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