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Steep switching in trimmed-gate tunnel FET
Author(s) -
Hidehiro Asai,
Takahiro Mori,
Takashi Matsukawa,
Junichi Hattori,
Kazuhiko Endo,
Koichi Fukuda
Publication year - 2018
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5043570
Subject(s) - quantum tunnelling , subthreshold swing , optoelectronics , tunnel field effect transistor , subthreshold slope , transistor , materials science , field effect transistor , voltage , ion , switching time , swing , channel (broadcasting) , logic gate , electrical engineering , physics , engineering , quantum mechanics , acoustics

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