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Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices
Author(s) -
Stéphane Altazin,
Christoph Kirsch,
Evelyne Knapp,
Alexandre Stous,
Beat Ruhstaller
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5043245
Subject(s) - organic semiconductor , diffusion , semiconductor , semiconductor device , interface (matter) , charge (physics) , materials science , optoelectronics , tandem , formalism (music) , layer (electronics) , computer science , nanotechnology , physics , thermodynamics , quantum mechanics , art , musical , visual arts , capillary number , capillary action , composite material

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