Open AccessHole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si
Author(s) -
A. Y. Polyakov,
N. B. Smirnov,
Ivan Shchemerov,
S. J. Pearton,
F. Ren,
А. В. Черных,
П. Б. Лагов,
T. V. Kulevoy
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5042646
Subject(s) - deep level transient spectroscopy , materials science , acceptor , atomic physics , doping , ionization , electron , gallium , vacancy defect , valence (chemistry) , condensed matter physics , optoelectronics , chemistry , ion , physics , silicon , organic chemistry , quantum mechanics , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom