Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity | Zendy

Jonas Deuermeier | Zendy; Hongjun Liu | Zendy; Laëtitia Rapenne | Zendy; Tomás Calmeiro | Zendy; Gilles Renou | Zendy; Rodrigo Martins | Zendy; David MuñozRojas | Zendy; Elvira Fortunato | Zendy

Open Access

Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity

Author(s) -

Jonas Deuermeier,

Hongjun Liu,

Laëtitia Rapenne,

Tomás Calmeiro,

Gilles Renou,

Rodrigo Martins,

David MuñozRojas,

Elvira Fortunato

Publication year - 2018

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5042046

Subject(s) - materials science , grain boundary , nanocrystalline material , band bending , thin film , schottky barrier , conductive atomic force microscopy , chemical vapor deposition , transmission electron microscopy , electrical resistivity and conductivity , optoelectronics , nanotechnology , composite material , atomic force microscopy , microstructure , diode , electrical engineering , engineering

Direct evidence for the presence of a CuO structure in the grain boundaries of Cu2O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu2O. The suppression of CuO formation at the Cu2O grain boundaries is identified as the key strategy for future device optimization.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research