Electron paramagnetic resonance and optical absorption study of acceptors in CdSiP2 crystals

Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wavelength and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus antisite and a copper impurity substituting for cadmium. When exposed to 633 nm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (SiP0 and CuCd0) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (SiCd2+ before illumination and SiCd+ after illumination). Removing the 633 nm light and warming the crystal above 90 K quickly destroys the EPR signals from both acceptors and the associated donor. Broad optical absorption bands peaking near 0.8 and 1.4 μm are also produced at low temperature by the 633 nm light. These absorption bands are associated with the SiP0 and CuCd0 acceptors.Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wavelength and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus antisite and a copper impurity substituting for cadmium. When exposed to 633 nm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (SiP0 and CuCd0) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (SiCd2+ before illumination and SiCd+ after illumination). Removing the 633 nm light and warming the crystal above 90 K quickly destroys the EPR signals from both acceptors and the associated donor....