Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
Author(s) -
Dimitrios Damianos,
G. Vitrant,
Anne KaminskiCachopo,
Danièle Blanc-Pélissier,
G. Ghibaudo,
Ming Lei,
J. Changala,
Aude Bouchard,
Xavier Mescot,
Martine Gri,
S. Cristoloveanu,
I. Ionica
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5041062
Subject(s) - passivation , electric field , materials science , second harmonic generation , microwave , optoelectronics , oxide , capacitance , voltage , carrier lifetime , analytical chemistry (journal) , silicon , optics , layer (electronics) , chemistry , nanotechnology , electrical engineering , electrode , physics , laser , engineering , quantum mechanics , chromatography , metallurgy
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