InP double heterojunction bipolar transistors for terahertz computed tomography | Zendy

Dominique Coquillat | Zendy; Alexandre Duhant | Zendy; Meriam Triki | Zendy; Virginie Nodjiadjim | Zendy; A. Konczykowska | Zendy; M. Riet | Zendy; Nina Dyakonova | Zendy; Olivier Strauss | Zendy; W. Knap | Zendy

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InP double heterojunction bipolar transistors for terahertz computed tomography

Author(s) -

Dominique Coquillat,

Alexandre Duhant,

Meriam Triki,

Virginie Nodjiadjim,

A. Konczykowska,

M. Riet,

Nina Dyakonova,

Olivier Strauss,

W. Knap

Publication year - 2018

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5039331

Subject(s) - terahertz radiation , heterojunction , optoelectronics , materials science , transistor , bipolar junction transistor , voltage , radiation , optics , physics , electrical engineering , engineering

We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.

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