Open AccessHydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
Author(s) -
Zeyang Ren,
Guansheng Yuan,
Jinfeng Zhang,
Lei Xu,
Jincheng Zhang,
Wanjiao Chen,
Yue Hao
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5037925
Subject(s) - materials science , optoelectronics , passivation , transconductance , atomic layer deposition , diamond , dielectric , mosfet , high κ dielectric , gate dielectric , threshold voltage , diode , gate oxide , layer (electronics) , transistor , electrical engineering , nanotechnology , voltage , metallurgy , engineering
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