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Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells
Author(s) -
Chinedu Christian Ahia,
Ngcali Tile,
Amalia Navarro,
Beatriz Galiana Blanco,
J.R. Botha
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5037296
Subject(s) - photoluminescence , metalorganic vapour phase epitaxy , quantum dot , materials science , optoelectronics , transmission electron microscopy , stacking , scanning electron microscope , quantum well , blueshift , laser linewidth , annealing (glass) , epitaxy , layer (electronics) , optics , chemistry , nanotechnology , laser , composite material , physics , organic chemistry

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