The thermal stability of epitaxial GeSn layers | Zendy

P. Zaumseil | Zendy; Yaonan Hou | Zendy; Markus Andreas Schubert | Zendy; Nils von den Driesch | Zendy; Daniela Stange | Zendy; Denis Rainko | Zendy; Michele Virgilio | Zendy; Dan Buca | Zendy; Giovanni Capellini | Zendy

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The thermal stability of epitaxial GeSn layers

Author(s) -

P. Zaumseil,

Yaonan Hou,

Markus Andreas Schubert,

Nils von den Driesch,

Daniela Stange,

Denis Rainko,

Michele Virgilio,

Dan Buca,

Giovanni Capellini

Publication year - 2018

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5036728

Subject(s) - materials science , annealing (glass) , epitaxy , heterojunction , condensed matter physics , stress relaxation , thermal stability , relaxation (psychology) , lattice (music) , chemical physics , optoelectronics , nanotechnology , chemical engineering , composite material , layer (electronics) , psychology , social psychology , creep , physics , acoustics , engineering

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.

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