A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement
Author(s) -
Yi Wei,
Yiren Lin,
Xichuan Yang,
Xin Tan,
Jia Quan Su,
Chengyuan Song,
Shengzhong Liu
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5035503
Subject(s) - wafer , passivation , materials science , carrier lifetime , silicon , optoelectronics , wavelength , excited state , charge carrier , surface photovoltage , molecular physics , analytical chemistry (journal) , atomic physics , chemistry , spectroscopy , physics , nanotechnology , layer (electronics) , chromatography , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom