Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies | Zendy

L. Nicolas | Zendy; Tom Delord | Zendy; Paul Huillery | Zendy; Elke Neu | Zendy; G. Hétet | Zendy

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Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies

Author(s) -

L. Nicolas,

Tom Delord,

Paul Huillery,

Elke Neu,

G. Hétet

Publication year - 2018

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5035484

Subject(s) - laser linewidth , diamond , photoluminescence , materials science , vacancy defect , nano , chemical vapor deposition , silicon , phonon , optoelectronics , crystal (programming language) , line (geometry) , condensed matter physics , optics , physics , metallurgy , laser , geometry , mathematics , computer science , composite material , programming language

Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) can exhibit a narrow photoluminescence (PL) line and lifetime-limited linewidth in bulk diamonds at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.

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