Open AccessThe dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts
Author(s) -
Moh’d Rezeq,
Ahmed E. Ali,
Shashikant P. Patole,
Khouloud Eledlebi,
Ripon Kumar Dey,
Bo Cui
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5035400
Subject(s) - schottky diode , schottky barrier , nanoprobe , materials science , metal–semiconductor junction , semiconductor , optoelectronics , rectification , diode , substrate (aquarium) , nano , electrical junction , metal , electrical contacts , nanotechnology , nanoparticle , metallurgy , voltage , electrical engineering , oceanography , engineering , geology , composite material
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