Open AccessHigh voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
Author(s) -
Jingshan Wang,
Lina Cao,
Jinqiao Xie,
Edward Beam,
Robert McCarthy,
C. Youtsey,
Patrick Fay
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5035267
Subject(s) - ohmic contact , materials science , optoelectronics , diode , breakdown voltage , passivation , ion implantation , anode , wide bandgap semiconductor , voltage , figure of merit , gallium nitride , power semiconductor device , enhanced data rates for gsm evolution , doping , scaling , layer (electronics) , ion , electrical engineering , electrode , nanotechnology , chemistry , computer science , telecommunications , geometry , mathematics , engineering , organic chemistry
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