Open AccessSolution-processed stacked TiO2 and Al2O3 dielectric layers for high mobility thin film transistor
Author(s) -
Shu Jiang,
Xiang Yang,
Jianhua Zhang,
Xifeng Li
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5034497
Subject(s) - thin film transistor , materials science , gate dielectric , dielectric , optoelectronics , threshold voltage , amorphous solid , transistor , high κ dielectric , electron mobility , subthreshold conduction , permittivity , subthreshold slope , voltage , electrical engineering , nanotechnology , layer (electronics) , chemistry , crystallography , engineering
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