z-logo
open-access-imgOpen Access
Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit
Author(s) -
Jiancheng Yang,
F. Ren,
Marko J. Tadjer,
S. J. Pearton,
Akito Kuramata
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5034444
Subject(s) - figure of merit , breakdown voltage , schottky diode , reverse bias , doping , schottky barrier , materials science , optoelectronics , voltage , current density , saturation current , electrical engineering , analytical chemistry (journal) , chemistry , physics , diode , engineering , chromatography , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom