Open AccessHigh-mobility field-effect transistor based on crystalline ZnSnO3 thin films
Author(s) -
Hiroya Minato,
Kohei Fujiwara,
Atsushi Tsukazaki
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5034403
Subject(s) - materials science , transistor , field effect transistor , optoelectronics , molecular beam epitaxy , polarization (electrochemistry) , electron mobility , stoichiometry , polar , epitaxy , nanotechnology , chemistry , layer (electronics) , voltage , electrical engineering , physics , organic chemistry , astronomy , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom