Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications
Author(s) -
Muhammad Sanaullah,
Abdul Hamid Bin Yousuf,
Azzedin Es-Sakhi,
Masud H. Chowdhury
Publication year - 2018
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5034320
Subject(s) - materials science , band gap , optoelectronics , direct and indirect band gaps , photodetector , semiconductor , brillouin zone , doping , molybdenum disulfide , crystal (programming language) , wide bandgap semiconductor , optics , physics , metallurgy , computer science , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom