Open AccessInsight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Author(s) -
Eigo Fujita,
Mitsuru Sometani,
Tetsuo Hatakeyama,
Shinsuke Harada,
Hiroshi Yano,
Takuji Hosoi,
Takayoshi Shimura,
Heiji Watanabe
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5034048
Subject(s) - materials science , mosfet , hall effect , field effect transistor , optoelectronics , electron mobility , annealing (glass) , field effect , wide bandgap semiconductor , silicon carbide , threshold voltage , transistor , voltage , electrical engineering , electrical resistivity and conductivity , composite material , engineering
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