Open AccessPhysical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
Author(s) -
Hyeon-Bhin Jo,
JungHo Park,
Seungwoo Son,
Ji-Min Baek,
Do-Young Yun,
Yeonsung Kang,
Yong-Hyun Seo,
Lee Min Yung,
JungHee Lee,
TaeWoo Kim,
Dae-Hyun Kim
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5034041
Subject(s) - capacitance , materials science , optoelectronics , quantum capacitance , quantum well , field effect transistor , mosfet , transistor , electrical engineering , physics , engineering , electrode , optics , voltage , quantum mechanics , laser
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