Leakage mechanisms in GaN-on-GaN vertical pn diodes | Zendy

Ben Rackauskas | Zendy; Stefano Dalcanale | Zendy; Michael J. Uren | Zendy; Tetsu Kachi | Zendy; Martin Kuball | Zendy

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Leakage mechanisms in GaN-on-GaN vertical pn diodes

Author(s) -

Ben Rackauskas,

Stefano Dalcanale,

Michael J. Uren,

Tetsu Kachi,

Martin Kuball

Publication year - 2018

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5033436

Subject(s) - materials science , diode , wide bandgap semiconductor , optoelectronics , impurity , conduction band , leakage (economics) , reverse leakage current , vacancy defect , condensed matter physics , light emitting diode , chemistry , schottky diode , physics , electron , organic chemistry , quantum mechanics , economics , macroeconomics

Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

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