Open AccessResearch Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x
Author(s) -
Blanka Magyari-Köpe,
Yali Song,
Dan Duncan,
Liang Zhao,
Yoshio Nishi
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5032120
Subject(s) - dopant , materials science , ab initio , density functional theory , chemical physics , valence (chemistry) , doping , ab initio quantum chemistry methods , resistive random access memory , dissociation (chemistry) , computational chemistry , chemistry , electrode , optoelectronics , molecule , organic chemistry
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