z-logo
open-access-imgOpen Access
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
Author(s) -
Lina Cao,
Jingshan Wang,
Galen Harden,
Hansheng Ye,
Roy A. Stillwell,
Anthony J. Hoffman,
Patrick Fay
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5031785
Subject(s) - impact ionization , ionization , electric field , materials science , electron , atomic physics , avalanche breakdown , epitaxy , gallium nitride , layer (electronics) , optoelectronics , breakdown voltage , ion , chemistry , physics , nanotechnology , organic chemistry , quantum mechanics , voltage

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom