Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
Author(s) -
Lina Cao,
Jingshan Wang,
Galen Harden,
Hansheng Ye,
Roy A. Stillwell,
Anthony J. Hoffman,
Patrick Fay
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5031785
Subject(s) - impact ionization , ionization , electric field , materials science , electron , atomic physics , avalanche breakdown , epitaxy , gallium nitride , layer (electronics) , optoelectronics , breakdown voltage , ion , chemistry , physics , nanotechnology , organic chemistry , quantum mechanics , voltage
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