Open AccessEffect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms
Author(s) -
Takahiro Mori,
Yukinori Morita,
Takashi Matsukawa
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5030795
Subject(s) - annealing (glass) , ion implantation , vacancy defect , silicon , dissociation (chemistry) , photoluminescence , ion , crystallography , chemistry , materials science , atomic physics , metallurgy , optoelectronics , physics , organic chemistry
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