Open AccessPublisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
Author(s) -
Muhammad Usman,
Kiran Saba,
DongPyo Han,
Nazeer Muhammad,
Shabieh Farwa,
Muhammad Rafiq,
Tanzila Saba
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5030116
Subject(s) - optoelectronics , auger effect , diode , light emitting diode , materials science , polarization (electrochemistry) , degradation (telecommunications) , wide bandgap semiconductor , recombination , auger , engineering physics , physics , atomic physics , chemistry , electrical engineering , engineering , biochemistry , gene
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