Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices | Zendy

Billy J. Murdoch | Zendy; Thomas J. Raeber | Zendy; Anders J. Barlow | Zendy; Dougal G. McCulloch | Zendy; J. G. Partridge | Zendy

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Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices

Author(s) -

Billy J. Murdoch,

Thomas J. Raeber,

Anders J. Barlow,

Dougal G. McCulloch,

J. G. Partridge

Publication year - 2018

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5029402

Subject(s) - materials science , non volatile memory , annealing (glass) , resistive random access memory , neuromorphic engineering , transmission electron microscopy , amorphous solid , amorphous carbon , nanotechnology , optoelectronics , electrode , chemistry , composite material , computer science , organic chemistry , machine learning , artificial neural network

The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.

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