Open AccessAb-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces
Author(s) -
L. Lymperakis
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5029339
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , molecular beam epitaxy , materials science , ab initio , boron , ab initio quantum chemistry methods , density functional theory , solubility , deposition (geology) , metal , epitaxy , wide bandgap semiconductor , chemical physics , analytical chemistry (journal) , computational chemistry , chemistry , nanotechnology , molecule , optoelectronics , metallurgy , organic chemistry , layer (electronics) , paleontology , sediment , biology
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