Open AccessCharacterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
Author(s) -
Hironori Yoshioka,
K. Hirata
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5027695
Subject(s) - variable range hopping , mosfet , materials science , condensed matter physics , atmospheric temperature range , thermal conduction , threshold voltage , gate voltage , range (aeronautics) , electron mobility , characterization (materials science) , channel (broadcasting) , voltage , optoelectronics , electrical engineering , transistor , nanotechnology , physics , thermodynamics , composite material , engineering
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