Open AccessBand gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
Author(s) -
Max Birkett,
W. M. Linhart,
Jessica Stoner,
Laurie J. Phillips,
K. Durose,
Jonathan Alaria,
Jonathan D. Major,
R. Kudrawiec,
T. D. Veal
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5027157
Subject(s) - sublimation (psychology) , band gap , materials science , selenide , photovoltaics , scanning electron microscope , optoelectronics , direct and indirect band gaps , diffraction , antimony , spectroscopy , wide bandgap semiconductor , photovoltaic system , optics , physics , composite material , psychology , ecology , selenium , quantum mechanics , metallurgy , psychotherapist , biology
The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Large rhubarb-like grains favorable for photovoltaics naturally develop. The temperature-dependence of the direct band gap is determined by photoreflectance between 20 and 320 K and is well described by the Varshni and Bose–Einstein relations, blue-shifting with decreasing temperature from 1.18 to 1.32 eV. The 300 K band gap matches that seen in high quality single-crystal material, while the 0 K gap is consistent with that found in first-principles calculations, further supporting the array of beneficial photovoltaic properties indicated for this material.
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