Open AccessElectrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon
Author(s) -
Aiswarya Pradeepkumar,
Marcin Zieliński,
Matteo Bosi,
Giovanni Verzellesi,
D. Kurt Gaskill,
Francesca Iacopi
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5026124
Subject(s) - materials science , silicon , silicon carbide , optoelectronics , nanocrystalline silicon , epitaxy , van der pauw method , electrical resistivity and conductivity , substrate (aquarium) , leakage (economics) , nanotechnology , crystalline silicon , hall effect , composite material , electrical engineering , amorphous silicon , oceanography , engineering , layer (electronics) , geology , economics , macroeconomics